A multimodal artificial sensory neuron realized by a bio-voltage-level threshold switching memristor

We fabricated a threshold switching memristor (TSM) with a structure of Pt/Ag/Al 2 O 3 /HfO 2 /Ag NIs/Pt. Building upon this TSM, we further developed an artificial sensory neuron with spike amplitude encoding capabilities.

Authors

Shizhe Lin
Hui Wu (ORCID: https://orcid.org/0000-0003-0296-5204)
Jin Zhou (ORCID: https://orcid.org/0000-0002-1534-2279)
H. Liang
Ting Jiang
Baolin Zhang
Nan Tian

Institutions

Guilin University of Technology (CN)

Publication Details

Journal: Journal of Materials Chemistry C
Published: 2026-01-01
DOI: https://doi.org/10.1039/d5tc04265h
Primary Topic: Advanced Memory and Neural Computing
Type: article
Field-Weighted Citation Impact: 0.00

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article

A multimodal artificial sensory neuron realized by a bio-voltage-level threshold switching memristor

Shizhe Lin, Hui Wu, Jin Zhou, H. Liang et al.

Jan 1, 2026

Journal of Materials Chemistry C

Advanced Memory and Neural Computing

article

A multimodal artificial sensory neuron realized by a bio-voltage-level threshold switching memristor

Shizhe Lin, Hui Wu, Jin Zhou, H. Liang, Ting Jiang, Baolin Zhang, Nan Tian

January 1, 2026article en

Abstract

Journal of Materials Chemistry CVol. 14(11)

Guilin University of Technology (CN)

Affordable and clean energy

Openalex Percentile: Top 96%

Advanced Memory and Neural Computing

DOI Source OpenAlex

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