Alleviating trade-off between dark current and sensitivity of β-Ga <sub>2</sub> O <sub>3</sub> X ray detectors <i>via</i> defect engineering

In this study, air annealing was employed to achieve simultaneous modulation of both V o and V Ga defects in β-Ga 2 O 3 single crystals. The fabricated detector demonstrates outstanding comprehensive performance and successfully realizes object imaging.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2026-01-01
DOI
https://doi.org/10.1039/d5tc03993b
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.00
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article

Alleviating trade-off between dark current and sensitivity of β-Ga 2 O 3 X ray detectors via defect engineering

Y. Y. Liu, Wen-Lei Mu, Zeliang Gao, Yang Li et al.
Journal of Materials Chemistry C
Ga2O3 and related materials
article

Alleviating trade-off between dark current and sensitivity of β-Ga 2 O 3 X ray detectors via defect engineering

Y. Y. Liu, Wen-Lei Mu, Zeliang Gao, Yang Li, Kun Zhang, Xinyu Liu
article en

Abstract

In this study, air annealing was employed to achieve simultaneous modulation of both V o and V Ga defects in β-Ga 2 O 3 single crystals. The fabricated detector demonstrates outstanding comprehensive performance and successfully realizes object imaging.

Journal of Materials Chemistry C
Crystal Research (United States) (US)
Openalex Percentile: Top 96%
Ga2O3 and related materials
DOISourceOpenAlex
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Alleviating trade-off between dark current and sensitivity of β-Ga <sub>2</sub> O <sub>3</sub> X ray detectors <i>via</i> defect engineering — Y. Y. Liu, Wen-Lei Mu, et al. · Journal of Materials Chemistry C (2026) | TGRS Research Map | TGRS