Charge Injection for Polarization Screening at Electrode Interfaces and the Antiferroelectric Double Hysteresis Loop of La‐Doped Pb(Zr,Sn,Ti)O <sub>3</sub>

ABSTRACT Polarization screening at electrode interfaces has been the subject of controversial studies. The nature and role of the screening charges, especially when comparing the behavior of ferroelectric and antiferroelectric materials, are still not entirely clear. In this study, we analyze the polarization screening at electrode interfaces of ferroelectric and antiferroelectric La‐doped by X‐ray photoelectron spectroscopy with in situ polarization reversal. A variation of the Schottky barrier height at a few nanometer thick and Sn‐doped electrode interfaces, which is caused by an imperfect screening of the polarization, is only observed for samples exhibiting ferroelectricity but not for samples with antiferroelectric hysteresis loops. According to the line shape analysis of the photoelectron spectra, the different screening behavior of ferroelectric and antiferroelectric La‐doped can be assigned to differences in charge injection. Antiferroelectric hysteresis loops are observed if the screening charges are completely injected from the electrode while only partial charge injection is observed into ferroelectric samples. Charge injection could be fundamental to the reversibility of the field‐induced transition from the non‐polar to the polar state of antiferroelectrics.

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Publication Details

Journal
Advanced Materials Interfaces
Published
2026-01-07
DOI
https://doi.org/10.1002/admi.202500671
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Charge Injection for Polarization Screening at Electrode Interfaces and the Antiferroelectric Double Hysteresis Loop of La‐Doped Pb(Zr,Sn,Ti)O 3

Binxiang Huang, Tadej Rojac, Andreas Klein, Ting Yang et al.
Advanced Materials Interfaces
Ferroelectric and Piezoelectric Materials
article

Charge Injection for Polarization Screening at Electrode Interfaces and the Antiferroelectric Double Hysteresis Loop of La‐Doped Pb(Zr,Sn,Ti)O 3

Binxiang Huang, Tadej Rojac, Andreas Klein, Ting Yang, Pengcheng Hu, Johanna Steinmann, Melissa A. Larsson
article en

Abstract

ABSTRACT Polarization screening at electrode interfaces has been the subject of controversial studies. The nature and role of the screening charges, especially when comparing the behavior of ferroelectric and antiferroelectric materials, are still not entirely clear. In this study, we analyze the polarization screening at electrode interfaces of ferroelectric and antiferroelectric La‐doped by X‐ray photoelectron spectroscopy with in situ polarization reversal. A variation of the Schottky barrier height at a few nanometer thick and Sn‐doped electrode interfaces, which is caused by an imperfect screening of the polarization, is only observed for samples exhibiting ferroelectricity but not for samples with antiferroelectric hysteresis loops. According to the line shape analysis of the photoelectron spectra, the different screening behavior of ferroelectric and antiferroelectric La‐doped can be assigned to differences in charge injection. Antiferroelectric hysteresis loops are observed if the screening charges are completely injected from the electrode while only partial charge injection is observed into ferroelectric samples. Charge injection could be fundamental to the reversibility of the field‐induced transition from the non‐polar to the polar state of antiferroelectrics.

Advanced Materials InterfacesVol. 13(3)
Tongji University (CN), Jožef Stefan Institute (SI), Technische Universität Darmstadt (DE)
Deutsche Forschungsgemeinschaft, China Scholarship Council
Openalex Percentile: Top 96%
Ferroelectric and Piezoelectric Materials
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Charge Injection for Polarization Screening at Electrode Interfaces and the Antiferroelectric Double Hysteresis Loop of La‐Doped Pb(Zr,Sn,Ti)O <sub>3</sub> — Binxiang Huang, Tadej Rojac, et al. · Advanced Materials Interfaces (2026) | TGRS Research Map | TGRS