Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands

The isospin flavors in condensed matters can be continuously broken, forming various symmetry-broken quantum states. In moiré crystals, the competition between different isospin configurations can be effectively tuned by the twist angles and stacking orders. Here we report twisted double rhombohedral-trilayer-graphene as a new twisted crystalline flatband system showing rich moiré dependent topological phenomena. In devices with small twist angles, programmable Chern insulators with Chern number <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline"> <a:mrow> <a:mi>C</a:mi> <a:mo>=</a:mo> <a:mn>3</a:mn> </a:mrow> </a:math> at integer moiré filling <c:math xmlns:c="http://www.w3.org/1998/Math/MathML" display="inline"> <c:mrow> <c:mi>v</c:mi> <c:mo>=</c:mo> <c:mn>1</c:mn> </c:mrow> </c:math> have been observed. We have further revealed an exotic hidden order which can quench the Chern insulator as well as multiple first-order transitions between different symmetry-broken phases. Interestly, in the device with a slightly larger twist angle, multiple Chern insulators with <e:math xmlns:e="http://www.w3.org/1998/Math/MathML" display="inline"> <e:mrow> <e:mi>C</e:mi> <e:mo>=</e:mo> <e:mn>1</e:mn> </e:mrow> </e:math> at fractional moiré fillings including <g:math xmlns:g="http://www.w3.org/1998/Math/MathML" display="inline"> <g:mrow> <g:mi>v</g:mi> <g:mo>=</g:mo> <g:mn>1</g:mn> <g:mo>/</g:mo> <g:mn>4</g:mn> </g:mrow> </g:math> , <i:math xmlns:i="http://www.w3.org/1998/Math/MathML" display="inline"> <i:mrow> <i:mn>1</i:mn> <i:mo>/</i:mo> <i:mn>3</i:mn> </i:mrow> </i:math> , and <k:math xmlns:k="http://www.w3.org/1998/Math/MathML" display="inline"> <k:mrow> <k:mn>1</k:mn> <k:mo>/</k:mo> <k:mn>2</k:mn> </k:mrow> </k:math> have been observed, whereas the Chern insulator at <m:math xmlns:m="http://www.w3.org/1998/Math/MathML" display="inline"> <m:mrow> <m:mi>v</m:mi> <m:mo>=</m:mo> <m:mn>1</m:mn> </m:mrow> </m:math> is absent. Our study demonstrated the twisted flatbands form rhombohedral-multilayer-graphene as a new platform to study tunable high Chern insulators as well as new devices for quantum storage and computation.

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Journal
Physical Review X
Published
2026-01-06
DOI
https://doi.org/10.1103/7m1b-hxy8
Primary Topic
Topological Materials and Phenomena
Type
article
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article

Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands

Anonymous, X. C. Xie, Kenji Watanabe, Takashi Taniguchi et al.
Physical Review X
Topological Materials and Phenomena
article

Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands

Anonymous, X. C. Xie, Kenji Watanabe, Takashi Taniguchi, Zaizhe Zhang, Yijie Wang, Xiaobo Lu, Xiaoxia Yang, Gengdong Zhou, Shu Zhang, Kaihui Liu, Qing Dai, Zihao Huo, Zhida Song
article en

Abstract

The isospin flavors in condensed matters can be continuously broken, forming various symmetry-broken quantum states. In moiré crystals, the competition between different isospin configurations can be effectively tuned by the twist angles and stacking orders. Here we report twisted double rhombohedral-trilayer-graphene as a new twisted crystalline flatband system showing rich moiré dependent topological phenomena. In devices with small twist angles, programmable Chern insulators with Chern number <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline"> <a:mrow> <a:mi>C</a:mi> <a:mo>=</a:mo> <a:mn>3</a:mn> </a:mrow> </a:math> at integer moiré filling <c:math xmlns:c="http://www.w3.org/1998/Math/MathML" display="inline"> <c:mrow> <c:mi>v</c:mi> <c:mo>=</c:mo> <c:mn>1</c:mn> </c:mrow> </c:math> have been observed. We have further revealed an exotic hidden order which can quench the Chern insulator as well as multiple first-order transitions between different symmetry-broken phases. Interestly, in the device with a slightly larger twist angle, multiple Chern insulators with <e:math xmlns:e="http://www.w3.org/1998/Math/MathML" display="inline"> <e:mrow> <e:mi>C</e:mi> <e:mo>=</e:mo> <e:mn>1</e:mn> </e:mrow> </e:math> at fractional moiré fillings including <g:math xmlns:g="http://www.w3.org/1998/Math/MathML" display="inline"> <g:mrow> <g:mi>v</g:mi> <g:mo>=</g:mo> <g:mn>1</g:mn> <g:mo>/</g:mo> <g:mn>4</g:mn> </g:mrow> </g:math> , <i:math xmlns:i="http://www.w3.org/1998/Math/MathML" display="inline"> <i:mrow> <i:mn>1</i:mn> <i:mo>/</i:mo> <i:mn>3</i:mn> </i:mrow> </i:math> , and <k:math xmlns:k="http://www.w3.org/1998/Math/MathML" display="inline"> <k:mrow> <k:mn>1</k:mn> <k:mo>/</k:mo> <k:mn>2</k:mn> </k:mrow> </k:math> have been observed, whereas the Chern insulator at <m:math xmlns:m="http://www.w3.org/1998/Math/MathML" display="inline"> <m:mrow> <m:mi>v</m:mi> <m:mo>=</m:mo> <m:mn>1</m:mn> </m:mrow> </m:math> is absent. Our study demonstrated the twisted flatbands form rhombohedral-multilayer-graphene as a new platform to study tunable high Chern insulators as well as new devices for quantum storage and computation.

Physical Review XVol. 16(1)
Shanghai Jiao Tong University (CN), Peking University (CN), Fudan University (CN), Center for NanoScience (DE), Hefei University (CN), Collaborative Innovation Center of Quantum Matter (CN), Material Sciences (United States) (US), National Center for Nanoscience and Technology (CN)
Openalex Percentile: Top 94%
Topological Materials and Phenomena
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