Extreme Transverse Magnetoresistance in TiZn <sub>16</sub>

ABSTRACT Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 10 4 –10 7 % when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe 2 , PtSn 4 , Cd 3 As 2 , and LaSb. The origin of XMR is still hotly debated, possibly with different materials having different (or multiple) explanations. Extreme transverse magnetoresistance of up to 8000% at 14 T and 1.8 K is measured in TiZn 16 , a semimetal with a multitude of bands crossing the Fermi energy, akin to PtSn 4 . The magnetoresistance is suppressed when the magnetic field is rotated to be parallel to the applied current, similar to PtSn 4 and PdSn 4 . The resistance of TiZn 16 follows Kohler's rule, but displays different behavior under an applied transverse field and under a longitudinal magnetic field, suggesting distinct electrical phases. Also present are Shubnikov‐de Haas and de Haas‐van Alphen oscillations with a transverse magnetic field up to 43 T, showing that despite an insulator‐like temperature‐resistance curve, charge carriers are still present. This positions TiZn 16 as an interesting addition to the investigation of XMR materials as a multi‐band metal with complex Fermi surface geometries.

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Publication Details

Journal
Advanced Electronic Materials
Published
2026-01-04
DOI
https://doi.org/10.1002/aelm.202500632
Primary Topic
Rare-earth and actinide compounds
Type
article
Field-Weighted Citation Impact
0.00

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article

Extreme Transverse Magnetoresistance in TiZn 16

L. Li, Haozhe Wang, Wing Tai Kong, Weiwei Xie et al.
Advanced Electronic Materials
Rare-earth and actinide compounds
article

Extreme Transverse Magnetoresistance in TiZn 16

L. Li, Haozhe Wang, Wing Tai Kong, Weiwei Xie, Brianna R. Billingsley, Dechen Zhang, Kaila Jenkins, Guoxin Zheng, Y. Zhu, Kuan‐Wen Chen, Aaron Chan, Na Hyun Jo
article en

Abstract

ABSTRACT Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 10 4 –10 7 % when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe 2 , PtSn 4 , Cd 3 As 2 , and LaSb. The origin of XMR is still hotly debated, possibly with different materials having different (or multiple) explanations. Extreme transverse magnetoresistance of up to 8000% at 14 T and 1.8 K is measured in TiZn 16 , a semimetal with a multitude of bands crossing the Fermi energy, akin to PtSn 4 . The magnetoresistance is suppressed when the magnetic field is rotated to be parallel to the applied current, similar to PtSn 4 and PdSn 4 . The resistance of TiZn 16 follows Kohler's rule, but displays different behavior under an applied transverse field and under a longitudinal magnetic field, suggesting distinct electrical phases. Also present are Shubnikov‐de Haas and de Haas‐van Alphen oscillations with a transverse magnetic field up to 43 T, showing that despite an insulator‐like temperature‐resistance curve, charge carriers are still present. This positions TiZn 16 as an interesting addition to the investigation of XMR materials as a multi‐band metal with complex Fermi surface geometries.

Advanced Electronic MaterialsVol. 12(3)
University of Arizona (US), University of Michigan (US), Michigan State University (US)
National Science Foundation, U.S. Department of Energy, Michigan State University, National High Magnetic Field Laboratory, College of Engineering, Michigan State University, Division of Materials Research, High Magnetic Field Laboratory, Chinese Academy of Sciences
Affordable and clean energy
Openalex Percentile: Top 94%
Rare-earth and actinide compounds
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