Gallium‐Based Semiconductor Integrated Circuits: Past, Present, and Future for Emerging Optoelectronic Devices

ABSTRACT As the cornerstone of modern electronic technology, Ga‐based semiconductors encompassing GaN, GaAs, Ga 2 O 3 , and GaSb have emerged as core materials for next‐generation optoelectronic applications, spanning consumer electronics, power devices, optical communication systems, and quantum technologies. This review systematically assesses their intrinsic properties, such as wide bandgaps, high electron mobility, and excellent thermal stability, which underpin technological breakthroughs in micro‐LEDs, power electronics, photodetectors, photonics, and sensing technologies. By examining advances in scalable fabrication technologies and innovative device architectures, this study emphasizes their transformative potential in frontier fields including AR, high‐speed communication, and energy‐efficient electronics. Collectively, this review highlights the pivotal role of Ga‐based semiconductors in propelling the development of next‐generation electronics and photonics, while elaborating on current challenges and outlining promising directions for future research.