Bidirectional optically modulated In2O3 transistors with inorganic solid electrolyte gating for neuromorphic visual systems

Inspired by retinal visual processing, we demonstrate a bidirectional optically controlled neuromorphic In2O3 transistor based on an inorganic solid electrolyte Li1+xAlxTi2-x(PO4)3 (LATP) gate dielectric. The device exhibits light-controlled bidirectional visual bipolar cell behavior, exhibiting excitatory and inhibitory responses under ultraviolet (275 nm) and green light (520 nm) stimuli, respectively. X-ray photoelectron spectroscopy and capacitance–frequency measurements reveal that mobile Li+ ions in the LATP dielectric layer can adsorb electrons and form Coulombic binding states, thereby dynamically modulating photogenerated carrier transport. Optical pulse trains dynamically regulate the channel current, enabling bidirectional optical neural plasticity. Furthermore, a large-area device array was employed for image encoding and retinal damage simulation, highlighting its potential for artificial vision and neuromorphic computing. These findings establish an effective strategy for developing bidirectional optical, reconfigurable, and large-scale integrable neuromorphic devices, providing additional insights into the role of dielectric layer ion dynamics in neuromorphic optoelectronics.

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Publication Details

Journal
Applied Physics Letters
Published
2026-01-05
DOI
https://doi.org/10.1063/5.0306146
Citations
1
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
21.93
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Bidirectional optically modulated In2O3 transistors with inorganic solid electrolyte gating for neuromorphic visual systems

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Applied Physics Letters
Advanced Memory and Neural Computing
21.93
article

Bidirectional optically modulated In2O3 transistors with inorganic solid electrolyte gating for neuromorphic visual systems

Yunchao Xu, Jia Sun, Xiaofang Shi, Chenxing Jin, Wanrong Liu, Ruihan Li, Guansong Qiu, Junliang Yang
article en
1 citations

Abstract

Inspired by retinal visual processing, we demonstrate a bidirectional optically controlled neuromorphic In2O3 transistor based on an inorganic solid electrolyte Li1+xAlxTi2-x(PO4)3 (LATP) gate dielectric. The device exhibits light-controlled bidirectional visual bipolar cell behavior, exhibiting excitatory and inhibitory responses under ultraviolet (275 nm) and green light (520 nm) stimuli, respectively. X-ray photoelectron spectroscopy and capacitance–frequency measurements reveal that mobile Li+ ions in the LATP dielectric layer can adsorb electrons and form Coulombic binding states, thereby dynamically modulating photogenerated carrier transport. Optical pulse trains dynamically regulate the channel current, enabling bidirectional optical neural plasticity. Furthermore, a large-area device array was employed for image encoding and retinal damage simulation, highlighting its potential for artificial vision and neuromorphic computing. These findings establish an effective strategy for developing bidirectional optical, reconfigurable, and large-scale integrable neuromorphic devices, providing additional insights into the role of dielectric layer ion dynamics in neuromorphic optoelectronics.

Applied Physics LettersVol. 128(1)
Central South University (CN), Hunan University (CN), State Key Laboratory of Transducer Technology (CN), Shanghai Institute of Microsystem and Information Technology (CN), South University (US)
Industry, innovation and infrastructure
Openalex Percentile: Top 3%
Advanced Memory and Neural Computing
21.93
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Bidirectional optically modulated In2O3 transistors with inorganic solid electrolyte gating for neuromorphic visual systems — Yunchao Xu, Jia Sun, et al. · Applied Physics Letters (2026) | TGRS Research Map | TGRS