Thermal radiation-matter interaction analysis and optimal design of InAs-based intermediate-band thermophotovoltaic cells
This study presents a framework for optimizing InAs-based intermediate-band thermophotovoltaic cells (IB-TPVCs) by enabling sub-bandgap photon absorption and carrier excitation. The transfer matrix method, integrated with the Drude–Lorentz model, is developed to quantify the angle- and wavelength-dependent absorptivity of multilayer structures for both transverse electric (TE) and transverse magnetic (TM) modes. The absorption spectra for TE mode exhibits distinct oscillatory peaks and valleys, which are caused by optical properties, structural parameters, interference, and resonance effects. The TM mode achieves stronger absorption at specific wavelengths and angles due to surface plasmon resonance and enhanced optical coupling. The spectral photon fluxes are calculated by combining the layer absorptivity with the blackbody radiation spectrum given by Planck's law. Furthermore, the internal quantum efficiency is examined as a function of both the absorber thickness and the photon wavelength. Based on these spectral and efficiency parameters, the short-circuit current density spectrum is calculated. The net current density is then determined by accounting for radiative, non-radiative, and dark current losses. Local optimization is performed by tuning the doping concentration under fixed structural and temperature conditions, while global strategies for maximizing power density and efficiency offer key insights for advancing TPV technology. Key Insights into Intermediate-Band Thermophotovoltaic Cells (IB-TPVC). Innovative Design: Development of an IB-TPVC that captures sub-bandgap photons to improve efficiency. Model Integration: Utilization of the transfer matrix method and Drude-Lorentz model to analyze multilayer material properties. Absorption Spectra Analysis: Distinct behaviors in TE and TM modes, with TM mode showing superior absorption due to surface plasmon resonance. Optimization Insights: Effect of semiconductor thickness and doping concentrations on built-in electric fields and quantum efficiency. Importance of tailored multilayer structures for maximizing thermal radiation absorption. Implications: Systematic parameter optimization leads to enhanced power density and conversion efficiency. This work provides a theoretical foundation for future advancements in TPV devices, promoting renewable energy technologies. • IB-TPVC designed for sub-bandgap photon absorption and efficient current generation. • Reflectivity and transmittance calculated using transfer matrix and Drude-Lorentz models. • TE and TM modes show distinct absorption peaks influenced by optical and structural factors. • Impacts of optical-electrical transfer losses on device's performance were revealed. • Doping and thickness can be optimized to enhance energy conversion performance.
Authors
- TianJun LIAO
- Chao Fan
Institutions
- Chongqing University of Science and Technology (CN)
- Chongqing University of Technology (CN)
Publication Details
- Journal
- Applied Thermal Engineering
- Published
- 2026-01-04
- DOI
- https://doi.org/10.1016/j.applthermaleng.2025.129655
- Primary Topic
- Thermal Radiation and Cooling Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00