An Ultra‐Low‐Power and High‐Temperature‐Homogeneity Wafer‐Scale Infrared Source

Non‐dispersive infrared gas sensors, renowned for their high selectivity and high reliability, are extensively employed in applications of smart agriculture. In particular, a stable and high‐emission infrared source component plays a critical role in the proper functioning of non‐dispersive infrared systems. However, current infrared sources usually have shortcomings in poor temperature homogeneity within the active area and low‐power consumption. Here, we demonstrate a wafer scale, in situ integrated infrared source combined with an Al@NF‐based radiation layer, achieving a high emissivity of 0.8 at 4.26 μm. Through iterative optimization of the microheater pattern, the temperature homogeneity reaches an impressive 90%. In the integrated Al@NF‐infrared source sensing system, the power density is reduced from 386.8 to 256.7 mW/mm 2 ; meanwhile, its operational efficiency is increased eighteenfold, from 0.39% to 7.24%. The developed device enables precise tracking of greenhouse gas concentrations under controlled greenhouse conditions. The findings pave the way for low‐power non‐dispersive infrared systems and provide a new hardware model for smart agriculture.