Porous Bi <sub>2</sub> S <sub>3</sub> Bulk With Excellent Thermoelectric Performance by Solid States Replacement and Low Melting‐Point Metal Volatilization

Bismuth sulfide (Bi<sub>2</sub>S<sub>3</sub>) exhibits potentials in thermoelectric field, due to their environmental friendliness, high Seebeck coefficients, and low thermal conductivity. However, the peak ZT for binary Bi<sub>2</sub>S<sub>3</sub> does not exceed 1.0, inhibiting its practical applications. Starting from the precipitation smelting of bismuth concentrate process, this study constructs multi-type, multi-scale in-situ secondary phases and porous structures through FeCoNi (FCN) medium-entropy alloy addition, significantly enhancing the ZT value of Bi<sub>2</sub>S<sub>3</sub>-based thermoelectric materials. The introduced FCN reacts with pre-synthesized Bi<sub>2</sub>S<sub>3</sub> nanorod matrix during spark plasma sintering and forms precipitate complex with FCN-S core and Bi shell microstructures. FCN doping improves the carrier concentration of Bi<sub>2</sub>S<sub>3</sub> and the reduced Bi from Bi<sub>2</sub>S<sub>3</sub> acts as carrier transport channels for mobility optimization. Due to the stacking effect of Bi<sub>2</sub>S<sub>3</sub> nanorods and the volatile nature of metallic Bi, porous Bi<sub>2</sub>S<sub>3</sub> structure is formed, characterized by randomly-distributed and micro-to-nanoscale pores. The coexistence of various lattice defects effectively scatter phonons and suppress the lattice thermal conductivity, thus an excellent peak ZT of 1.1 is achieved at 773 K in a 0.25 wt.% FCN-doped Bi<sub>2</sub>S<sub>3</sub> sample. This study, drawing on the process of ore smelting, proposes a convenient method for preparing high-performance chalcogenide thermoelectric materials with porous structures.

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Publication Details

Journal
Advanced Materials
Published
2026-01-02
DOI
https://doi.org/10.1002/adma.202521215
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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Porous Bi 2 S 3 Bulk With Excellent Thermoelectric Performance by Solid States Replacement and Low Melting‐Point Metal Volatilization

Fengshan Zheng, Jing Feng, Xing Wei Yang, Lei Jin et al.
Advanced Materials
Advanced Thermoelectric Materials and Devices
article

Porous Bi 2 S 3 Bulk With Excellent Thermoelectric Performance by Solid States Replacement and Low Melting‐Point Metal Volatilization

Fengshan Zheng, Jing Feng, Xing Wei Yang, Lei Jin, Jun Guo, Yi‐xin Zhang, Z. Wang, Hao Liang, Zhen‐Hua Ge, Rafal E. Dunin‐Borkowski
article en

Abstract

Bismuth sulfide (Bi<sub>2</sub>S<sub>3</sub>) exhibits potentials in thermoelectric field, due to their environmental friendliness, high Seebeck coefficients, and low thermal conductivity. However, the peak ZT for binary Bi<sub>2</sub>S<sub>3</sub> does not exceed 1.0, inhibiting its practical applications. Starting from the precipitation smelting of bismuth concentrate process, this study constructs multi-type, multi-scale in-situ secondary phases and porous structures through FeCoNi (FCN) medium-entropy alloy addition, significantly enhancing the ZT value of Bi<sub>2</sub>S<sub>3</sub>-based thermoelectric materials. The introduced FCN reacts with pre-synthesized Bi<sub>2</sub>S<sub>3</sub> nanorod matrix during spark plasma sintering and forms precipitate complex with FCN-S core and Bi shell microstructures. FCN doping improves the carrier concentration of Bi<sub>2</sub>S<sub>3</sub> and the reduced Bi from Bi<sub>2</sub>S<sub>3</sub> acts as carrier transport channels for mobility optimization. Due to the stacking effect of Bi<sub>2</sub>S<sub>3</sub> nanorods and the volatile nature of metallic Bi, porous Bi<sub>2</sub>S<sub>3</sub> structure is formed, characterized by randomly-distributed and micro-to-nanoscale pores. The coexistence of various lattice defects effectively scatter phonons and suppress the lattice thermal conductivity, thus an excellent peak ZT of 1.1 is achieved at 773 K in a 0.25 wt.% FCN-doped Bi<sub>2</sub>S<sub>3</sub> sample. This study, drawing on the process of ore smelting, proposes a convenient method for preparing high-performance chalcogenide thermoelectric materials with porous structures.

Advanced MaterialsVol. 38(11)
Kunming University of Science and Technology (CN), Ernst Ruska Centre (DE), South China University of Technology (CN)
National Natural Science Foundation of China
Life in Land
Openalex Percentile: Top 98%
Advanced Thermoelectric Materials and Devices
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