Controllable Goos–Hänchen shift in graphene at telecommunication wavelength

Graphene, being the thinnest known conductive material, exhibits exceptional mechanical, electronic, optical, and magnetic characteristics. Its remarkable flexibility and mechanical strength make it a promising candidate for integration into a wide range of flexible nanophotonic and optoelectronic devices. This study theoretically expounds the enhancement and controllability of the Goos–Hanchen (GH) shift under the telecommunication wavelength regime by the deployment of a graphene sheet. Given the fixed incident wavelength near about λ =1550nm, the crystal of quartz experiences a markedly giant GH shift by controlling the Fermi energy and temperature of graphene. The GH shift exhibits strong sensitivity to the presence of a graphene sheet near the Brewster angle for p -polarized incidence and can be dynamically controlled by adjusting the Fermi energy of graphene. This paper offers fresh insights into the properties of graphene, along with the distinctive behavior of its key parameters when integrated with quartz, particularly SiO 2 . Our analysis indicates that the Fermi energy serves as a powerful tuning parameter, enabling broad control over the GH shift. This work presents promising avenues for developing controllable photonic devices with enhanced sensitivity. Furthermore, it provides a theoretical approach for creating highly sensitive temperature sensors by leveraging the GH shift in low-temperature settings. Moreover, the unique photonic characteristics of graphene and its scalable integration make it possible to realize efficient, low-power optoelectronic devices for future datacom and telecom technologies.