Effect of polarization Coulomb field scattering on GaN devices

We present a comprehensive review and analysis of the polarization Coulomb field (PCF) scattering theory in GaN heterostructure field-effect transistors (GaN HFETs), which include AlGaN/GaN HFETs and InAlN/GaN HFETs. This paper develops a theoretical framework for understanding PCF scattering in GaN HFETs and explores its application in various areas, including device modeling, channel electron velocity modulation, circuit performance optimization, and the analysis of split-gate AlGaN/GaN HFETs. Additionally, we investigate the potential applications of PCF scattering theory in polar dielectric semiconductor devices and underscore its broader scientific significance.