Experimental demonstration of wurtzite to rock salt transition and bandgap evolution in In1− <i>x</i> Sc <i>x</i> N grown by sputtering
In this study, we investigated the structural properties of In1−xScxN thin films and studied their phase evolution and lattice behavior across varying Sc concentrations. XRD analysis was employed to determine the phase stability and to identify the critical composition range when the transition from wurtzite to cubic structure occurs. The corresponding changes in lattice parameters were quantified by calculating a and c. Optical transmission measurements combined with absorption coefficient analysis and Moss–Burstein corrections enabled the estimation of the optical bandgap, which exhibited a systematic blue shift in the wurtzite phase with increasing Sc content. Our findings lay a crucial groundwork for deeper exploration of this novel material system and seek to inspire wider research into its potential for different application fields.
Authors
- Florian Hörich (ORCID: https://orcid.org/0000-0003-4720-7650)
- O. Ambacher (ORCID: https://orcid.org/0000-0001-5193-9016)
- N. Afshar (ORCID: https://orcid.org/0009-0000-7107-1920)
- Armin Dadgar
- M. Yassine (ORCID: https://orcid.org/0000-0003-2080-253X)
- W. Liebscher
Institutions
- University of Freiburg (DE)
- Sustainable Energy Systems (United Kingdom) (GB)
- Otto-von-Guericke-Universität Magdeburg (DE)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2026-01-02
- DOI
- https://doi.org/10.1063/5.0304865
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 26.95
Funders
- Deutsche Forschungsgemeinschaft
- European Regional Development Fund