Progress Toward Efficient Wide‐Gap Cu(In,Ga)(S,Se) <sub>2</sub> Thin‐Film Solar Cells

ABSTRACT In this paper, wide‐gap Cu(In,Ga)(S,Se) 2 thin‐film solar cells are studied in view of their performance, limitations, and opportunities for further optimization. To this end, a wide variety of properties is investigated. This includes the role of gallium gradients, grain size effects, electronic properties, doping metastabilities, and minority carrier lifetime. Particular emphasis is placed on the impact of alkali atoms. A comparison of surface, interface, and grain boundary chemistry shows systematic atomic accumulation and depletion effects. This leads to electronic modifications in the grain boundary regions of the absorber. Heavy alkali treatments also influence the device properties, giving a clear boost of open‐circuit voltage. By the combination of different experimental results, this positive open‐circuit voltage effect has been explained in terms of reduction of interface recombination. The latter effects are discussed in view of a possible alkali–indium–selenium bond formation at the interface between the absorber and the buffer layer. The properties of a 14.2%‐efficient Cu(In,Ga)Se 2 ‐based device with [Ga]/([Ga] + [In]) = 0.8 and a wide optical band gap of 1.48 eV are investigated, also in view of further opportunities for improvement.

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Publication Details

Journal
Progress in Photovoltaics Research and Applications
Published
2026-01-02
DOI
https://doi.org/10.1002/pip.70036
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

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article

Progress Toward Efficient Wide‐Gap Cu(In,Ga)(S,Se) 2 Thin‐Film Solar Cells

Clemens Heske, Florian Wilhelmi, Victor R. van Maris, Dimitrios Hariskos et al.
Progress in Photovoltaics Research and Applications
Chalcogenide Semiconductor Thin Films
article

Progress Toward Efficient Wide‐Gap Cu(In,Ga)(S,Se) 2 Thin‐Film Solar Cells

Clemens Heske, Florian Wilhelmi, Victor R. van Maris, Dimitrios Hariskos, L. Weinhardt, Patrick Eraerds, Dagmar Gerthsen, Setareh Zahedi‐Azad, Mary Blankenship, Dirk Hauschild, Xiaowei Jin, T. P. Niesen, Wolfram Witte, Jasmin Seeger, M. Hetterich, Wolfram Hempel, Stefan Paetel, Reinhard Schneider, José A. Márquez, Christian Kübel, Thomas Unold, Hao Luo, Di Wang, Thomas Dalibor, Oana Cojocaru‐Mirédin, Roland Scheer
article en

Abstract

ABSTRACT In this paper, wide‐gap Cu(In,Ga)(S,Se) 2 thin‐film solar cells are studied in view of their performance, limitations, and opportunities for further optimization. To this end, a wide variety of properties is investigated. This includes the role of gallium gradients, grain size effects, electronic properties, doping metastabilities, and minority carrier lifetime. Particular emphasis is placed on the impact of alkali atoms. A comparison of surface, interface, and grain boundary chemistry shows systematic atomic accumulation and depletion effects. This leads to electronic modifications in the grain boundary regions of the absorber. Heavy alkali treatments also influence the device properties, giving a clear boost of open‐circuit voltage. By the combination of different experimental results, this positive open‐circuit voltage effect has been explained in terms of reduction of interface recombination. The latter effects are discussed in view of a possible alkali–indium–selenium bond formation at the interface between the absorber and the buffer layer. The properties of a 14.2%‐efficient Cu(In,Ga)Se 2 ‐based device with [Ga]/([Ga] + [In]) = 0.8 and a wide optical band gap of 1.48 eV are investigated, also in view of further opportunities for improvement.

Progress in Photovoltaics Research and Applications
Karlsruhe Institute of Technology (DE), University of Nevada, Las Vegas (US), University of Freiburg (DE), Helmholtz-Zentrum Berlin für Materialien und Energie (DE), Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (DE), Avid (Germany) (DE), Martin Luther University Halle-Wittenberg (DE)
Bundesministerium für Wirtschaft und Energie
Openalex Percentile: Top 99%
Chalcogenide Semiconductor Thin Films
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