ENHANCED ERROR CORRECTION FOR MEMORY CELLS IN SPACE: A DUAL APPROACH TO RANDOM AND BURST FAULT DIAGNOSIS
This paper presents a novel method of fault diagnosis in memory cells that can be employed for space applications. The method presented here capable of diagnosing both random faults as well as burst errors. The proposed method is composed of two techniques one of the technique aims at targeting the random faults while the other aims at diagnosing the burst errors. The diagnosis of random faults is obtained by employing the extended decimal matrix coding whereas the burst errors diagnosis is done by Flexible Unequal Error Method. This method gains an adequate advantage in increasing the length of burst errors coverage based on the probability of distribution of the random faults. In addition to these little overhead bits were added to increase the diagnosis of burst errors. Experimental results conclude that the proposed error correction code achieves 100% of error correction rate for 5bit adjacent errors and six-bit random errors and better error correction rates up to 8-bits compared other ECC’s that are considered for experimental purpose. However, this enhancement in error correction rate is achieved at a cost of slight increment in overhead of redundant bits.
Authors
- Journal of Theoretical and Applied Information Technology
Publication Details
- Journal
- Zenodo (CERN European Organization for Nuclear Research)
- Published
- 2025-08-31
- DOI
- https://doi.org/10.5281/zenodo.18110867
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00