Ultrafast voltage-induced switching enabled by coupling dynamics in perpendicular magnetic tunnel junction

Ultrafast magnetization switching is essential for spintronic applications, yet the switching speed of current-driven approaches such as spin-transfer torque and spin–orbit torque is fundamentally limited by magnetic damping. Here, we demonstrate voltage-driven switching in perpendicular magnetic tunnel junctions with an exchange-coupled free layer, combining voltage-controlled magnetic anisotropy and voltage-controlled exchange coupling. We achieve unidirectional reversal with a 50% probability within 87.5 ps, establishing the sub-100-ps capability of voltage-induced switching. Analysis of switching probability vs pulse width reveals an intrinsic size-dependent switching efficiency, which is enhanced as device dimensions decrease. This trend reflects the role of coupling dynamics as confirmed by macrospin simulations, establishing coupling dynamics as the key enabler of ultrafast voltage-driven switching.

Authors

Institutions

Publication Details

Journal
Applied Physics Letters
Published
2025-12-29
DOI
https://doi.org/10.1063/5.0302502
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Ultrafast voltage-induced switching enabled by coupling dynamics in perpendicular magnetic tunnel junction

Shuang Liang, Yifei Yang, Qi Jia, D. L. Zhang et al.
Applied Physics Letters
Magnetic properties of thin films
article

Ultrafast voltage-induced switching enabled by coupling dynamics in perpendicular magnetic tunnel junction

Shuang Liang, Yifei Yang, Qi Jia, D. L. Zhang, Yu‐Chia Chen, Jian-ping Wang, Yang Lv
article en

Abstract

Ultrafast magnetization switching is essential for spintronic applications, yet the switching speed of current-driven approaches such as spin-transfer torque and spin–orbit torque is fundamentally limited by magnetic damping. Here, we demonstrate voltage-driven switching in perpendicular magnetic tunnel junctions with an exchange-coupled free layer, combining voltage-controlled magnetic anisotropy and voltage-controlled exchange coupling. We achieve unidirectional reversal with a 50% probability within 87.5 ps, establishing the sub-100-ps capability of voltage-induced switching. Analysis of switching probability vs pulse width reveals an intrinsic size-dependent switching efficiency, which is enhanced as device dimensions decrease. This trend reflects the role of coupling dynamics as confirmed by macrospin simulations, establishing coupling dynamics as the key enabler of ultrafast voltage-driven switching.

Applied Physics LettersVol. 127(26)
University of Minnesota (US)
Affordable and clean energy
Openalex Percentile: Top 30%
Magnetic properties of thin films
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Ultrafast voltage-induced switching enabled by coupling dynamics in perpendicular magnetic tunnel junction — Shuang Liang, Yifei Yang, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS