Wide Band Gap Semiconductor Devices in Power Converter Design for Electric Vehicle Applications

The rapid growth in electric vehicle (EV) adoption has generated an imperative demand for power electronic converters that exhibit high efficiency, compactness, and reliability. Conventional silicon (Si)-based semiconductors are reaching their theoretical limits and hence open the door for exploring wide band gap (WBG) and ultrawide band gap (UWBG) materials. This article provides an extensive review of the recent advancements in WBG semiconductor devices and their application to EV power converters. We assess the material properties, fabrication issues, and device performance of wellestablished WBG materials such as silicon carbide (SiC) and gallium nitride (GaN) and emerging UWBG materials such as diamond and gallium oxide (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex>). Special focus is given to performance parameters important to EV systems, including on-state resistance, switching losses, thermal management, and operation at harsh conditions, e.g., cryogenic temperatures. Based on a comparative evaluation, we explore the applicability of each material to various EV power converter topologies, such as traction inverters, on-board chargers (OBCs), and DC-DC converters. The paper concludes by combining the technology readiness levels, establishing the current research gaps, and forecasting future trends in WBG device deployment to facilitate the development of electric mobility.