A Tunable Capacitance ReRAM for Improvement of Dynamic Range in CMOS Image Sensors
work reports a tunable-capacitance resistive memory (TCReRAM) device. The TCReRAM uses a binary metal-oxide active-layer and exhibits strong voltage-dependent capacitance (VDC) under appropriate operating conditions. The observed VDC dynamics is characterized experimentally, and its physical origin is investigated through comprehensive multiscale simulations. The developed TCReRAM device, integrated at the floating diffusion node of a CMOS image sensor (CIS) pixel, introduces VDC that helps mitigate saturation under high illumination conditions. Pixel-level simulations further demonstrate that incorporating the TCReRAM significantly improves the dynamic range by nearly 25% compared to the existing reported Hybrid CIS, effectively addressing performance limitations across varying illumination levels.
Authors
- Luca Larcher (ORCID: https://orcid.org/0000-0002-9139-349X)
- S. Chourasia (ORCID: https://orcid.org/0009-0001-5886-1810)
- Bhaswar Chakrabarti (ORCID: https://orcid.org/0000-0003-0623-3895)
- Gaurav Thareja
- Andrea Padovani (ORCID: https://orcid.org/0000-0003-1145-5257)
- S. Pande
Institutions
- University of Modena and Reggio Emilia (IT)
- Applied Materials (United States) (US)
- Indian Institute of Technology Madras (IN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-12-31
- DOI
- https://doi.org/10.1109/led.2025.3649829
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00