Retraction of “N <sub>2</sub> /H <sub>2</sub> Plasma-Enhanced Atomic Layer Deposition for SiO <sub>2</sub> Gap Filling: Implications for Nanoelectronics in Semiconductor Manufacturing”
Retraction of “N 2 /H 2 Plasma-Enhanced Atomic Layer Deposition for SiO 2 Gap Filling: Implications for Nanoelectronics in Semiconductor Manufacturing”
Sameh Okasha, Jun Yoshikawa, Dawn Munson
Journal
ACS Applied Nano Materials
Topics
Copper Interconnects and Reliability
article
Retraction of “N 2 /H 2 Plasma-Enhanced Atomic Layer Deposition for SiO 2 Gap Filling: Implications for Nanoelectronics in Semiconductor Manufacturing”
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Retraction of “N <sub>2</sub> /H <sub>2</sub> Plasma-Enhanced Atomic Layer Deposition for SiO <sub>2</sub> Gap Filling: Implications for Nanoelectronics in Semiconductor Manufacturing” — Sameh Okasha, Jun Yoshikawa, et al. · ACS Applied Nano Materials (2025) | TGRS Research Map | TGRS