System-level simulation of antimonide focal plane arrays

A comprehensive multiphysics simulation framework was developed to systematically assess the key performance metrics of antimonide-based infrared detectors across various pixel structures and operating conditions. The study focuses on modulation transfer function (MTF), optical and electrical crosstalk, and noise equivalent temperature difference (NETD). Simulation results reveal that lateral carrier diffusion is the dominant factor contributing to MTF degradation. Moreover, parameters such as fill factor, bias voltage, pixel size, and integration time exhibit complex interdependencies that significantly affect overall device performance. The analysis further highlights the intricate interplay between structural design and thermal noise constraints, which is especially pronounced in dual-band detectors. This work provides a systematic understanding of the intrinsic influence of structural parameters on detector performance and offers theoretical guidance for the miniaturization and high-performance integration of antimonide-based infrared focal plane arrays.