Voltage Bias Effect on Light-Induced Bistable Switching in Two-Terminal Device Based on VO₂ Thin Films
In this manuscript, we experimentally investigate the effect of DC voltage bias on laser-induced bistable switching behavior in a two-terminal device based on vanadium dioxide (VO₂) thin films. To explore this phenomenon, a DC voltage source was connected in series with the device and a resistor to form a closed-loop circuit. The static and transient responses of the circuit current (I) were measured as the optical power (PL) of a ~1.55μm laser beam, incident on the VO₂ film, was varied under different bias voltages (V<sub>S</sub>). In the static response, current I exhibited hysteresis with respect to PL, but only within a narrow range of V<sub>S</sub> (6 ~ 9 V). Within this range, decreasing V<sub>S</sub> shifted the hysteresis loop toward higher PL values and narrowed its width, while increasing V<sub>S</sub> had the opposite effect. Outside this voltage range (V<sub>S</sub> < 6 V or V<sub>S</sub> > 9 V), the hysteresis behavior disappeared. At low V<sub>S</sub>, the device showed no switching, and at high V<sub>S</sub>, the switching became irreversible rather than bistable. In the transient response, clear laser-induced bistable switching was observed only in a narrower V<sub>S</sub> range (8 ~ 9 V), suggesting that dynamic bistability requires more stringent bias conditions compared to static hysteresis.
Authors
- Giwan Seo
Publication Details
- Journal
- Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
- Published
- 2025-12-30
- DOI
- https://doi.org/10.5207/jieie.2025.39.6.448
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00