Improved on/off ratio in interface-type memristors with an ion irradiation-induced large Schottky barrier for neuromorphic computing

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-12-30
DOI
https://doi.org/10.1039/d5tc03702f
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
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article

Improved on/off ratio in interface-type memristors with an ion irradiation-induced large Schottky barrier for neuromorphic computing

Weijin Kong, Pengshun Shan, Ruowei Wang, Tao Liu et al.
Journal of Materials Chemistry C
Advanced Memory and Neural Computing
article

Improved on/off ratio in interface-type memristors with an ion irradiation-induced large Schottky barrier for neuromorphic computing

Weijin Kong, Pengshun Shan, Ruowei Wang, Tao Liu, Yong Liu, Hao Wu, Minghao Zhang, Yuyi Li, Minghui Xu, Jie Su
article en

Abstract

No abstract available for this paper.
Journal of Materials Chemistry CVol. 14(10)
Qingdao University (CN), Shandong Academy of Sciences (CN)
Affordable and clean energy
Openalex Percentile: Top 41%
Advanced Memory and Neural Computing
DOISourceOpenAlex
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Improved on/off ratio in interface-type memristors with an ion irradiation-induced large Schottky barrier for neuromorphic computing — Weijin Kong, Pengshun Shan, et al. · Journal of Materials Chemistry C (2025) | TGRS Research Map | TGRS