A 1 Grad TID-Tolerant Bandgap Voltage Reference for HEP Applications in 28 nm CMOS Node

This work presents the design and characterization of a radiation-hardened bandgap voltage reference circuit, fabricated using a commercial 28 nm CMOS technology, for applications in high-energy physics experiments. The circuit was engineered to ensure stable performance under extreme radiation environments and wide temperature variations. Measurement results show a temperature coefficient of 11 ppm/°C at best over a temperature range of 100°C (from -40°C to 60°C), and a line regulation of 2.5 mV at room temperature. The mean value of the output voltage is around 480 mV, with a maximum variation of 2% when exposed to a Total Ionizing Dose (TID) of up to 1 Grad (SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>). The power consumption is 325 μW at room temperature, and the circuit operates correctly with a supply voltage ranging from 0.65 V to 1 V. The core area of the bandgap reference is 0.015 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. These results demonstrate the robustness of the proposed design for use in extreme radiation environments.