Electrostatically Doped Dual Gate Schottky Barrier Nanotube FET: An Optimized Design for High Performance Applications

To harness the benefits of reconfigurability, an electrostatically doped dual gate Schottky Barrier nanotube field effect transistor (FET), designed with an optimized architecture featuring a silicon thickness of [Formula: see text] [Formula: see text]nm and dielectric constant of [Formula: see text] is introduced. The proposed optimized device structure exhibits the minimum leakage current at [Formula: see text] [Formula: see text]A and the current ratio [Formula: see text] as [Formula: see text]. The transconductance ([Formula: see text]) and transconductance generation factor (TGF) values are estimated as [Formula: see text] [Formula: see text]S and 37.12[Formula: see text]V[Formula: see text] respectively, signifying better signal amplification capability and improved noise immunity. The optimization study reveals that incorporating a high-K dielectric layer along with gate and source/drain work function adjustments results in a 6.9% improvement in TGF for [Formula: see text] [Formula: see text]nm, compared to a 5.2% improvement for [Formula: see text] [Formula: see text]nm. The analog performance metrics, gain and width product (GBW) and corner frequency ([Formula: see text]) are estimated at [Formula: see text] [Formula: see text]Hz and [Formula: see text], respectively, demonstrating the suitability of these devices for application within the terahertz frequency range. The proposed device, with optimized performance metrics, outperforms existing alternatives such as dopingless gate-stacked Schottky Barrier nanowire FETs (single metal gates, dual gates and hetero-dielectric layers), dopant segregation layer Schottky Barrier FETs and gate/source-drain work function engineered FETs, as highlighted in prior research work. The transfer characteristics plotted for the proposed electrostatically doped dual-gate Schottky Barrier nanotube FET for [Formula: see text] [Formula: see text]nm highlight its substantial scaling potential.