Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet

Magnetic random-access memory (MRAM) provides a promising candidate for the next-generation memory technology with high-energy efficiency and fast operation speed. Spin splitting band structure in nonrelativistic collinear antiferromagnet with de-coupled crystal and spin symmetry provides a unique way for the flexible and efficient control of the polarization and flow directions of the spin current. Here, by integrating the potential altermagnetic (101)-RuO<sub>2</sub> writing channel with the magnetic tunnel junction (MTJ) device, we demonstrate the all-electrical field-free altermagnetic spin splitting torque (SST)-driven switching of the perpendicular-MTJ in the 3-terminal altermagnetic SST-MRAM device, with the tilted spin polarization and the transversal flow of the spin current. The z-spin torque is further characterized by the altermagnetic SST-induced shift of the magnetic hysteresis loop, and the field-free altermagnetic SST-driven magnetic domain switching of the recording layer is directly observed by the magneto-optic Kerr effect (MOKE) microscope. Our research establishes groundwork for advancing the development of the altermagnetic SST-MRAM, paving the way for the future all-electrical, energy-efficient and high-endurance MRAM applications with separated writing/reading channels.

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Publication Details

Journal
Nature Communications
Published
2025-12-30
DOI
https://doi.org/10.1038/s41467-025-68065-w
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

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article

Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet

Wenjie Song, Zhiyang Zeng, Yonglong Ga, Guoqiang Yu et al.
Nature Communications
Magnetic properties of thin films
article

Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet

Wenjie Song, Zhiyang Zeng, Yonglong Ga, Guoqiang Yu, Yu Fan, Yaqin Zhao, Qirui Cui, Aitian Chen, Meng Tang, Xiufeng Han, Hao Wu, Zhe Wang, Chuangwen Wu, Kang L. Wang, Tai An, Xiao Deng, Shouguo Wang, Tao Zhu, Zengtai Zhu, Xixiang Zhang, Dongxing Zheng, Jing Zhang, Peng Yan, Xu Zhang, Jinkui Zhao
article en

Abstract

Magnetic random-access memory (MRAM) provides a promising candidate for the next-generation memory technology with high-energy efficiency and fast operation speed. Spin splitting band structure in nonrelativistic collinear antiferromagnet with de-coupled crystal and spin symmetry provides a unique way for the flexible and efficient control of the polarization and flow directions of the spin current. Here, by integrating the potential altermagnetic (101)-RuO<sub>2</sub> writing channel with the magnetic tunnel junction (MTJ) device, we demonstrate the all-electrical field-free altermagnetic spin splitting torque (SST)-driven switching of the perpendicular-MTJ in the 3-terminal altermagnetic SST-MRAM device, with the tilted spin polarization and the transversal flow of the spin current. The z-spin torque is further characterized by the altermagnetic SST-induced shift of the magnetic hysteresis loop, and the field-free altermagnetic SST-driven magnetic domain switching of the recording layer is directly observed by the magneto-optic Kerr effect (MOKE) microscope. Our research establishes groundwork for advancing the development of the altermagnetic SST-MRAM, paving the way for the future all-electrical, energy-efficient and high-endurance MRAM applications with separated writing/reading channels.

Nature CommunicationsVol. 17(1)
Anhui University (CN), University of Electronic Science and Technology of China (CN), University of California, Los Angeles (US), Chinese Academy of Sciences (CN), Southern University of Science and Technology (CN), China Spallation Neutron Source (CN), Songshan Lake Materials Laboratory (CN), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), National Engineering Research Center of Electromagnetic Radiation Control Materials (CN), AlbaNova (SE), Institute of Physics (CN), National Laboratory for Superconductivity (CN), Great Bay University, King Abdullah University of Science and Technology (SA), KTH Royal Institute of Technology (SE)
National Natural Science Foundation of China, King Abdullah University of Science and Technology, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province
Affordable and clean energy
Openalex Percentile: Top 31%
Magnetic properties of thin films
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