Multi- and All-Acceptor Polymers for High-Performance n-Type Polymer Field Effect Transistors

Multi-acceptor and all-acceptor polymers solve the fundamental challenge of achieving unipolar electron transport without compromising stability in n-type polymer field-effect transistors. By systematically replacing electron-rich donors with acceptor units, these architectures push LUMO levels below -4.0 eV and HOMO levels below -5.7 eV. Consequently, electron mobilities exceeding 7 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, on/off ratios approaching 10<sup>7</sup>, and months-long ambient operation can be achieved. This review connects the molecular architecture to device function. We assert that short-range π-aggregation matters more than crystallinity-tight π-stacking over 5-10 molecules drives transport in rigid backbones. Device optimization through interface engineering (e.g., amine-functionalized self-assembled monolayers reduce the threshold voltages to 1-5 V), contact resistance minimization, and controlled processing transform the intrinsic material potential into working transistors. Current challenges, such as balancing the operating voltage against stability, scaling synthetic yields, and reducing contact resistance, define near-term research directions toward complementary circuits, thermoelectrics, and bioelectronics.

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Publication Details

Journal
Polymers
Published
2025-12-27
DOI
https://doi.org/10.3390/polym18010080
Primary Topic
Organic Electronics and Photovoltaics
Type
article
Field-Weighted Citation Impact
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article

Multi- and All-Acceptor Polymers for High-Performance n-Type Polymer Field Effect Transistors

Ganapathi Bharathi, Seongin Hong
Polymers
Organic Electronics and Photovoltaics
article

Multi- and All-Acceptor Polymers for High-Performance n-Type Polymer Field Effect Transistors

Ganapathi Bharathi, Seongin Hong
article en

Abstract

Multi-acceptor and all-acceptor polymers solve the fundamental challenge of achieving unipolar electron transport without compromising stability in n-type polymer field-effect transistors. By systematically replacing electron-rich donors with acceptor units, these architectures push LUMO levels below -4.0 eV and HOMO levels below -5.7 eV. Consequently, electron mobilities exceeding 7 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, on/off ratios approaching 10<sup>7</sup>, and months-long ambient operation can be achieved. This review connects the molecular architecture to device function. We assert that short-range π-aggregation matters more than crystallinity-tight π-stacking over 5-10 molecules drives transport in rigid backbones. Device optimization through interface engineering (e.g., amine-functionalized self-assembled monolayers reduce the threshold voltages to 1-5 V), contact resistance minimization, and controlled processing transform the intrinsic material potential into working transistors. Current challenges, such as balancing the operating voltage against stability, scaling synthetic yields, and reducing contact resistance, define near-term research directions toward complementary circuits, thermoelectrics, and bioelectronics.

PolymersVol. 18(1)
Gachon University (KR)
Openalex Percentile: Top 41%
Organic Electronics and Photovoltaics
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