Experimental Investigation and Behavioral Modeling of the Ron vs. Gate Overshoots Relationship in Schottky p-GaN HEMTs
The semi-floating p-GaN layer of commercial schottky HEMTs is suspected to be related to instabilities of the device’s electrical characteristics. Particularly, we recently explained how gate voltage spikes at turn-on can cause a drastic, lasting and reproducible dynamic Ron increase. The proposed explanation only partly matched the dynamics of the observed Ron fluctuations and only one device reference was tested. In this work, higher voltage spikes are explored and a device from an other manufacturer is also studied. We demonstrate with a ngspice simulation how all observed dynamic Ron behaviors can be explained with a two-diode model of the gate stack.
Authors
- David Trémouilles (ORCID: https://orcid.org/0000-0001-8446-9129)
- Emmanuel Marcault (ORCID: https://orcid.org/0000-0003-1276-5628)
- Ludovic Roche (ORCID: https://orcid.org/0000-0001-9125-5954)
- Corinne Alonso
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université Toulouse III - Paul Sabatier (FR)
- Université Fédérale de Toulouse Midi-Pyrénées (FR)
- Laboratoire d'Analyse et d'Architecture des Systèmes (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Direction de la Recherche Technologique (FR)
Publication Details
- Published
- 2025-11-10
- DOI
- https://doi.org/10.1109/wipda63755.2025.11303413
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00