A Frequency- and Power-Dependent Semi-Analytical Model for Wideband RF Energy Harvesting Rectifiers

In this study, a new semi-analytical model was developed that can calculate the output voltage of low-power microwave rectifiers as a function of frequency and input power. The model integrates diode rectification characteristics and frequency-dependent impedance mismatches within the same mathematical structure. Defined by second-order polynomial expressions for input power and frequency, the model directly incorporates reflection coefficient (S₁₁) data into the equations to account for frequency-dependent power losses caused by impedance mismatch, thereby improving calculation accuracy under wide-band conditions. To validate the model, a wide-band rectifier prototype with an FR4-based T-type matching network and a voltage doubler structure was designed and manufactured. Model calculations showed over 95% agreement with simulation results and closely followed the measured output voltage trends over the 0.5-3 GHz frequency range and input power levels from -12 dBm to 0 dBm. The proposed model provides a design-oriented and computationally efficient tool for wide-band, low-power RF energy harvesting and wireless power transfer applications, enabling rapid evaluation of impedance matching strategies with reduced reliance on electromagnetic simulations.