O-Band 4 × 1 Combiner Based on Silicon MMI Cascaded Tree Configuration

High-speed silicon (Si) photonic transmitters operating in the O-band require higher on-chip optical power to support advanced modulation formats and ever-increasing line rates. A straightforward approach is to operate laser diodes at higher output power or employ more specialized sources, but this raises cost and exacerbates nonlinear effects such as self-phase modulation, two-photon absorption, and free-carrier generation in high-index-contrast Si waveguides. This paper proposes a low-cost 4 × 1 tree-cascade multimode interference (MMI) power combiner on a Si-on-insulator platform at 1310 nm wavelength that enables coherent power scaling while remaining fully compatible with standard commercial O-band lasers. The device employs adiabatic tapers and low-loss S-bends to ensure uniform field evolution, suppress local field enhancement, and mitigate nonlinear phase accumulation. The optimized layout occupies a compact footprint of 12 µm × 772 µm and achieves a simulated normalized power transmission of 0.975 with an insertion loss of 0.1 dB. Spectral analysis shows a 3 dB bandwidth of 15.8 nm around 1310 nm, across the O-band operating window. Thermal analysis shows that wavelength drift associated with ±50 °C temperature variation remains within the device bandwidth, ensuring stable operation under realistic laser self-heating and environmental changes. Owing to its broadband response, fabrication tolerance, and compatibility with off-the-shelf laser diodes, the proposed combiner is a promising building block for O-band transmitters and photonic neural-network architectures based on cascaded splitter and combiner meshes, while preserving linear transmission and enabling dense, large-scale photonic integration.