Characterization of a 100 nm RADFET as a Proton Beam Detector

The RADFET VT06 developed by Varadis (Cork, Ireland), which is aimed at high-dose applications, mainly for spacecraft missions, has been characterized by low- and high-energy proton beams at two different facilities, the Accelerator National Centre (Sevilla, Spain) and the Paul Scherrer Institute (PSI) located in Villigen (Switzerland), using a reader unit system developed by the University of Granada (Spain). The devices have been characterized with proton energies of 1, 2, 3, 150, and 230 MeV, with accumulated doses from 130 to 512 Gy, where the RADFET was unbiased during the irradiation while the source voltage was measured before and after irradiation to monitor the radiation dose. Excellent linearity has been obtained with a minimum correlation factor R<sup>2</sup> of 0.996, with a sensitivity that can vary from (0.691 ± 0.007) mV/Gy for 1 MeV to (1.143 ± 0.023) mV/Gy for 230 MeV without any build-up layer. An excellent stability was found in the studied cases, with dispersion being lower than 4% after a dose accumulation higher than 500 and 200 Gy for protons of 1 and 3 MeV, respectively. The detectors demonstrated linear responses, very low sensitivity dispersion per set of samples, and excellent stability after irradiation. This shows that, with an appropriate readout system, the RADFET can become an excellent system for high-dose proton beams.

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Publication Details

Journal
Sensors
Published
2025-12-27
DOI
https://doi.org/10.3390/s26010202
Primary Topic
Radiation Effects in Electronics
Type
article
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article

Characterization of a 100 nm RADFET as a Proton Beam Detector

Nikola Vasović, Pedro Martín-Holgado, Yolanda Morilla, J. A. Moreno-Pérez et al.
Sensors
Radiation Effects in Electronics
article

Characterization of a 100 nm RADFET as a Proton Beam Detector

Nikola Vasović, Pedro Martín-Holgado, Yolanda Morilla, J. A. Moreno-Pérez, I. Ruiz-García, W. Hajdas, R. Duane, L. Morvaj, M. A. Carvajal
article en

Abstract

The RADFET VT06 developed by Varadis (Cork, Ireland), which is aimed at high-dose applications, mainly for spacecraft missions, has been characterized by low- and high-energy proton beams at two different facilities, the Accelerator National Centre (Sevilla, Spain) and the Paul Scherrer Institute (PSI) located in Villigen (Switzerland), using a reader unit system developed by the University of Granada (Spain). The devices have been characterized with proton energies of 1, 2, 3, 150, and 230 MeV, with accumulated doses from 130 to 512 Gy, where the RADFET was unbiased during the irradiation while the source voltage was measured before and after irradiation to monitor the radiation dose. Excellent linearity has been obtained with a minimum correlation factor R<sup>2</sup> of 0.996, with a sensitivity that can vary from (0.691 ± 0.007) mV/Gy for 1 MeV to (1.143 ± 0.023) mV/Gy for 230 MeV without any build-up layer. An excellent stability was found in the studied cases, with dispersion being lower than 4% after a dose accumulation higher than 500 and 200 Gy for protons of 1 and 3 MeV, respectively. The detectors demonstrated linear responses, very low sensitivity dispersion per set of samples, and excellent stability after irradiation. This shows that, with an appropriate readout system, the RADFET can become an excellent system for high-dose proton beams.

SensorsVol. 26(1)
Universidad de Granada (ES), Paul Scherrer Institute (CH), Centro Nacional de Aceleradores (ES), CyberColloids (IE), University of Glasgow (GB)
Affordable and clean energy
Openalex Percentile: Top 42%
Radiation Effects in Electronics
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Characterization of a 100 nm RADFET as a Proton Beam Detector — Nikola Vasović, Pedro Martín-Holgado, et al. · Sensors (2025) | TGRS Research Map | TGRS