Growth, structure, and morphology of ultra-thin tin oxide phases forming on Pt <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si48.svg" display="inline" id="d1e352"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> <

Here we report an investigation of ultrathin tin oxide films on Pt 3 Sn(111) using low-energy electron microscopy (LEEM), microspot low-energy electron diffraction ( μ -LEED), scanning tunneling microscopy (STM), surface X-ray diffraction (SXRD), and high-resolution X-ray photoelectron spectroscopy (XPS). Oxidation at ∼ 390–410 ° C produces triangular, two-dimensional oxide islands that nucleate rapidly and exhibit self-limited lateral growth, attributed to limited Sn diffusion from the subsurface of the crystal. μ -LEED shows that the initially formed ( 4 × 4 ) Sn oxide is subsequently converted to a more oxygen-rich ( 2 × 2 n ) “stripe” phase. At 630 ° C , enhanced Sn mobility enables a closed ( 4 × 4 ) film. The ( 2 × 2 n ) phase is shown to consist of a ( 2 × 2 ) Sn lattice modulated by 1D stripe defects with spacings of n = 4 –6 atomic rows; LEED and SXRD measurements show diffraction features corresponding to this striped superstructure. The two oxides can be distinguished in XPS by their O 1s lineshapes: the ( 4 × 4 ) phase shows a clear doublet attributable to distinct O species, whereas the ( 2 × 2 n ) phase exhibits a broader envelope consistent with a distribution of O coordination environments. The Sn 3d 5 / 2 spectra are similar for both phases, reflecting closely related Sn bonding motifs. The spectra are consistent with those of previous near-ambient-pressure XPS measurements, suggesting that the surface oxides forming under CO oxidation conditions are similar to those studied here. • Several experimental techniques have been applied to study the oxidation behavior of Pt 3 Sn(111) by O 2 under low-pressure conditions. • Oxidation of Pt 3 Sn(111) shows strong temperature dependence, both in terms of morphology and in atomic structure of surface oxides formed. • Self-limited growth of small islands at low temperature is caused by restricted diffusion of tin, while the difference in atomic structure is caused by differences in oxygen content. • The low-temperature “(2×2n)” surface oxide exhibits a complex structure that can be described as a reconstruction of a simpler (2×2) oxide motif.

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Publication Details

Journal
Surface Science
Published
2025-12-27
DOI
https://doi.org/10.1016/j.susc.2025.122927
Primary Topic
Semiconductor materials and devices
Type
article
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article

Growth, structure, and morphology of ultra-thin tin oxide phases forming on Pt <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si48.svg" display="inline" id="d1e352"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> <

J-O Krisponeit, J.I. Flege, L. Buß, M. Löfstrand et al.
Surface Science
Semiconductor materials and devices
article

Growth, structure, and morphology of ultra-thin tin oxide phases forming on Pt <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si48.svg" display="inline" id="d1e352"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> <

J-O Krisponeit, J.I. Flege, L. Buß, M. Löfstrand, A. Morales Rodriguez, P.M. Kofoed, J. Falta, A. Resta, T. Schmidt, E. Lundgren, J. Blomqvist, C. Berschauer, L.R. Merte, N. Braud, H.J. Wallander
article en

Abstract

Here we report an investigation of ultrathin tin oxide films on Pt 3 Sn(111) using low-energy electron microscopy (LEEM), microspot low-energy electron diffraction ( μ -LEED), scanning tunneling microscopy (STM), surface X-ray diffraction (SXRD), and high-resolution X-ray photoelectron spectroscopy (XPS). Oxidation at ∼ 390–410 ° C produces triangular, two-dimensional oxide islands that nucleate rapidly and exhibit self-limited lateral growth, attributed to limited Sn diffusion from the subsurface of the crystal. μ -LEED shows that the initially formed ( 4 × 4 ) Sn oxide is subsequently converted to a more oxygen-rich ( 2 × 2 n ) “stripe” phase. At 630 ° C , enhanced Sn mobility enables a closed ( 4 × 4 ) film. The ( 2 × 2 n ) phase is shown to consist of a ( 2 × 2 ) Sn lattice modulated by 1D stripe defects with spacings of n = 4 –6 atomic rows; LEED and SXRD measurements show diffraction features corresponding to this striped superstructure. The two oxides can be distinguished in XPS by their O 1s lineshapes: the ( 4 × 4 ) phase shows a clear doublet attributable to distinct O species, whereas the ( 2 × 2 n ) phase exhibits a broader envelope consistent with a distribution of O coordination environments. The Sn 3d 5 / 2 spectra are similar for both phases, reflecting closely related Sn bonding motifs. The spectra are consistent with those of previous near-ambient-pressure XPS measurements, suggesting that the surface oxides forming under CO oxidation conditions are similar to those studied here. • Several experimental techniques have been applied to study the oxidation behavior of Pt 3 Sn(111) by O 2 under low-pressure conditions. • Oxidation of Pt 3 Sn(111) shows strong temperature dependence, both in terms of morphology and in atomic structure of surface oxides formed. • Self-limited growth of small islands at low temperature is caused by restricted diffusion of tin, while the difference in atomic structure is caused by differences in oxygen content. • The low-temperature “(2×2n)” surface oxide exhibits a complex structure that can be described as a reconstruction of a simpler (2×2) oxide motif.

Surface ScienceVol. 767
University of Bremen (DE), Malmö University (SE), Lund University (SE), Synchrotron soleil (FR), Brandenburg University of Technology Cottbus-Senftenberg (DE)
Openalex Percentile: Top 42%
Semiconductor materials and devices
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