1200-V/10-A Press-Pack Gallium Oxide Schottky Barrier Diode Under a Quasi-Uniaxial Pressure of More Than 20 MPa

β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> is a competitive candidate for high-voltage power electronics because of its high critical field strength and easy access to high-quality native substrates. Rapid progress has been made in the electrical and thermal performances of β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> devices. However, the mechanical challenges presented by β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> to device packaging have hardly been addressed, specifically in the context of a press-pack package used widely in high-voltage high-capacity power devices. For the first time, this paper validates the feasibility of a β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> press-pack power device utilizing a 1200 V β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> SBD die under a quasi-uniaxial pressure of more than 20 MPa applied to a 200-μm-thick substrate. The reverse leakage current of the press-back β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> SBD remained stable under various pressures ranging from 2 MPa to 20 MPa, which indicated that no mechanical damage or defects that could have degraded the electrical performance were generated. Capacitance–voltage results showed that the Schottky barrier height was unaffected by the quasi-uniaxial pressures in the test range. Higher pressure reduced the contact resistance and the junction-to-case thermal resistance, both of which are beneficial for increasing the power capacity of the press-pack β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> SBD. Under the maximum clamping pressure of 20 MPa, the steady-state junction temperature rise did not exceed 150 K at DC 10 A and a corresponding heating power of over 27 W, from which a junction-to-case thermal resistance of below 5 K/W was determined.