An FVF-based Capacitorless LDO with Segmented Power Cells Achieving Fast Transient Response, Wideband High PSR, and Wide Load Current Range

This letter presents a capacitorless low-dropout (LDO) regulator with a flipped-voltage-follower (FVF) structure and segmented power cells, targeting fast transients and high power-supply-rejection (PSR). The design addresses the stability issues and bias point variations found in conventional FVF-based LDOs. Two key innovations are introduced: a cascode transistor in the fast loop to stabilize bias points, and a segmented core that extends the load current range and enhances AC performance. Additionally, this architecture enables efficient on-chip power delivery, reducing IR drop and simplifying power distribution networks. Implemented in 65-nm CMOS, the LDO operates from a 1.2-V input to a 1.0-V output, supporting a 100 mA load current. Simulations show a wideband PSR with a worst-case bound of < -14:2 dB and a transient response with undershoot and overshoot limited to 59 mV and 58 mV, respectively, for a 30 mA load step with a 10 ns edge.

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Publication Details

Journal
JSTS Journal of Semiconductor Technology and Science
Published
2025-12-26
DOI
https://doi.org/10.5573/jsts.2025.25.6.730
Primary Topic
Advanced DC-DC Converters
Type
article
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article

An FVF-based Capacitorless LDO with Segmented Power Cells Achieving Fast Transient Response, Wideband High PSR, and Wide Load Current Range

Doojin Jang
JSTS Journal of Semiconductor Technology and Science
Advanced DC-DC Converters
article

An FVF-based Capacitorless LDO with Segmented Power Cells Achieving Fast Transient Response, Wideband High PSR, and Wide Load Current Range

Doojin Jang
article en

Abstract

This letter presents a capacitorless low-dropout (LDO) regulator with a flipped-voltage-follower (FVF) structure and segmented power cells, targeting fast transients and high power-supply-rejection (PSR). The design addresses the stability issues and bias point variations found in conventional FVF-based LDOs. Two key innovations are introduced: a cascode transistor in the fast loop to stabilize bias points, and a segmented core that extends the load current range and enhances AC performance. Additionally, this architecture enables efficient on-chip power delivery, reducing IR drop and simplifying power distribution networks. Implemented in 65-nm CMOS, the LDO operates from a 1.2-V input to a 1.0-V output, supporting a 100 mA load current. Simulations show a wideband PSR with a worst-case bound of < -14:2 dB and a transient response with undershoot and overshoot limited to 59 mV and 58 mV, respectively, for a 30 mA load step with a 10 ns edge.

JSTS Journal of Semiconductor Technology and ScienceVol. 25(6)
Affordable and clean energy
Openalex Percentile: Top 42%
Advanced DC-DC Converters
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