Study of the electronic properties of quantum rings under the influence of the electric field in the presence of two off-center impurities

This study examines the electronic properties of a GaAs quantum ring under the influence of external electric fields and donor impurity interactions, utilizing the Finite Difference Method (FDM) and the effective mass approximation. We explore the effects of quantum ring geometry, impurity positioning, and the application of electric fields on the electron–impurity binding energy and the average distance between the electron and the impurities. Our results reveal that the electron–impurity binding energy is strongly influenced by the angular position of the impurities, with stronger interactions observed when the impurities are closer to the symmetry axis of the ring. The application of an external electric field induces the Stark effect, which reduces the binding energy and alters the electron charge distribution. Furthermore, the presence of impurity interactions ( κ = 1 ) increases the binding energy, while the absence of impurity interactions ( κ = 0 ) leads to weaker binding. The study also shows that the average distance between the electron and impurities is sensitive to the angular position of the impurities and decreases under the influence of an electric field. These findings underscore the crucial role of quantum ring geometry, external fields, and impurity interactions in shaping the electronic properties of nanoscale devices, providing valuable insights for the development of advanced quantum-based technologies.