Research on the Parasitic Inductance of the Bonding Wires in IGBT Modules Based on Their Morphology and Layout

As a typical electronic switching device, IGBT is widely used in various fields. Reducing the parasitic inductance parameters of IGBT is of great significance for improving the performance of power devices, enhancing system stability and reliability. To study the parasitic inductance of the internal bonding wire connection structure during the operation of IGBT modules, this paper considers the morphological modeling of bonding wires, bonding parameters, and the layout of bonding wire arrays, and proposes a new analysis model. Through mathematical calculation of the analysis model and Ansys Q3D simulation, the bonding wires with different geometric dimensions and layouts were studied and good correlation were obtained. This will reduce the impact of bonding parameters on the total parasitic inductance of the bonding wire during the pre-layout stage.