Effect of the SiC Film Thickness on the Morphology of Swift Heavy Ion Tracks

Parameters of tracks of swift heavy ions stopped in the electron energy loss regime in SiC films with a thickness of 10–100 nm have been determined. A model has been used that describes all stages of the track formation, from ionization and heating of the lattice (MC TREKIS-3) to its complete relaxation (classical molecular dynamics). Under irradiation by a 710-MeV Bi ion, surface nanohillocks are formed, the height of which increases with the film thickness L, attaining a constant value of 5.7 nm at L > 30 nm. Nanocavities surrounded by defect clusters remain along the ion trajectory over the entire volume of the films with L < 100 nm. In the 100 nm-thick film, a defect region near the surface is cone-shaped and extends to a depth of 35 nm.