Resonant Tunneling Oscillators Based on WSe <sub>2</sub> / <i>h</i> -BN/WSe <sub>2</sub> van der Waals Double Quantum Wells
A van der Waals (vdW) heterostructure of few-layer (FL)-WSe<sub>2</sub>/FL-<i>h</i>-BN/FL-WSe<sub>2</sub> exhibits resonant tunneling between the WSe<sub>2</sub> subbands through the <i>h</i>-BN barrier, analogous to that in conventional double-quantum-well (DQW) structures. This resonant tunneling in the vdW DQW device gives rise to pronounced negative differential resistance (NDR). Utilizing this NDR, we demonstrate a resonant tunneling oscillator: when the vdW DQW device is integrated into an LC resonant circuit and biased within its NDR region, sustained AC voltage oscillations are achieved with frequencies exceeding 1 MHz. Furthermore, a comparison of the oscillation characteristics of two different devices indicates that lowering the device resistance is a viable route toward higher-frequency operation. This work represents the first realization of oscillators based on resonant tunneling between transition-metal dichalcogenide layers, significantly broadening the potential of vdW electronics.
Authors
- Safumi Suzuki (ORCID: https://orcid.org/0000-0003-1558-7935)
- Tomoki Machida (ORCID: https://orcid.org/0000-0002-1938-7415)
- Momoko Onodera (ORCID: https://orcid.org/0000-0001-9457-6796)
- Kei Kinoshita (ORCID: https://orcid.org/0009-0005-4586-734X)
- Shota Okazaki
- Takao Sasagawa
- Kenji Watanabe
- Takashi Taniguchi
- Arisa Nishimura
- Mika Ito
- Rai Moriya
Institutions
- Tokyo Institute of Technology (JP)
- National Institute for Materials Science (JP)
- The University of Tokyo (JP)
Publication Details
- Journal
- Nano Letters
- Published
- 2025-12-26
- DOI
- https://doi.org/10.1021/acs.nanolett.5c05012
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00