High power diode lasers at 1470 nm with continuous power exceeding 10 W

Abstract High power InP-based diode lasers operating at 1470 nm have attracted considerable interest in various applications. In this paper, we report high-power lasers with varying stripe widths, which employ an extremely asymmetric epitaxial design for high-efficiency carrier injection and low optical loss. The characteristic temperature of the differential quantum efficiency ( T 1 ) exceeds 270 K. Single-emitter lasers with 200 μm wide aperture achieve over 10 W continuous-wave (CW) power at 20 °C and a peak wall-plug efficiency of 42%. The maximum CW power reaches 11.7 W in devices with 300 μm stripe width. The dependence of divergence angle on the current is investigated.