Tuning valley polarization of moiré trapped biexcitons by fine structure occupation in WS2/WSe2 heterostructures

Two-dimensional transition metal dichalcogenides (TMDs) heterostructures formed moiré superlattices have emerged as a new platform for exploring correlated excitonic states and valleytronic phenomena. Despite the significant progress in moiré-trapped single excitons, the valley polarization and fine structure of moiré-trapped biexcitons remain poorly understood, with the existing studies reporting only limited or zero polarization and lacking insight into the underlying mechanisms. Here, we study the moiré-trapped interlayer biexcitons in WS₂/WSe₂ heterostructures through power- and temperature-dependent photoluminescence (PL) spectroscopy. We find that the valley polarization of these biexcitons can be effectively tuned, reaching ~ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>55</mml:mn> <mml:mi>%</mml:mi></mml:math> at 120 K. This behavior is attributed to the different occupation of intravalley and intervalley biexcitons within the fine structure, with the intravalley biexcitons playing a dominant role. The power-dependent energy splitting and temperature-dependent polarization trends further confirm the existence of biexciton fine structure and its influence on valley polarization. Furthermore, the experiment revealed a fine structure splitting of 2.77 meV, consistent with theoretical calculations. Our study provides new insight into the rational control of excitonic states in moiré superlattices and establishes a basis for developing advanced valleytronic devices, such as polarization-sensitive photodetectors and quantum light sources.