Revealing the Interface Degradation of Monolithic Perovskite/Silicon Tandem Photovoltaics

Perovskite/silicon (Pero/Si) tandem solar cells are rapidly advancing toward high-efficiency photovoltaic deployment; yet, their long-term stability remains a critical bottleneck. Here, we systematically investigated interface degradation in monolithic Pero/Si tandem architectures based on two leading configurations: perovskite/tunnelling oxide passivated contact solar cells (Pero/TOPCon) and perovskite/heterojunction solar cells (Pero/HJT). Illumination and damp heat tests (following the ISOS-L-3 and ISOS-D-3 protocols) indicated that both tandem devices suffered from a pronounced interfacial instability. By revealing the buried interface properties with a multimodal interface characterization toolkit, we identified two degradation pathways: (i) perovskite decomposition at the buried interface driven by ion migration and deprotonation, and (ii) interfacial degradation of the silicon substrate exacerbated by ion invasion and hydrogen effusion. It is highlighted that the amorphous nature of the interconnection layers facilitated ion/hydrogen permeation and defect formation. Our work elucidated the additional interface degradation path of Pero/Si tandem, thus highlighting the importance of interconnection contact quality for developing durable Pero/Si tandem photovoltaics.

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Publication Details

Journal
ACS Energy Letters
Published
2025-12-25
DOI
https://doi.org/10.1021/acsenergylett.5c03423
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

Revealing the Interface Degradation of Monolithic Perovskite/Silicon Tandem Photovoltaics

Yuxin Yao, Qilin Zhou, Yu-Duan Wang, Chao Luo et al.
ACS Energy Letters
Perovskite Materials and Applications
article

Revealing the Interface Degradation of Monolithic Perovskite/Silicon Tandem Photovoltaics

Yuxin Yao, Qilin Zhou, Yu-Duan Wang, Chao Luo, Kwan Bum Choi, Elisaveta Ungur, Zhenrong Jia, Zihao Zhu, Zhenxiang Xing, Eduardo Solano, J Chen, Yi Hou, Ling Kai Lee, Jingcong Hu, Xinyu Zhang, Xi Wang, Tao Wang, Yoshiki Sugai, Ran Luo, Nengxu Li, Mengfei Wu, Zijing Dong, Shunchang Liu, Julian A Steele, Mingsheng Zhang, Huiyuan Cheng
article en

Abstract

Perovskite/silicon (Pero/Si) tandem solar cells are rapidly advancing toward high-efficiency photovoltaic deployment; yet, their long-term stability remains a critical bottleneck. Here, we systematically investigated interface degradation in monolithic Pero/Si tandem architectures based on two leading configurations: perovskite/tunnelling oxide passivated contact solar cells (Pero/TOPCon) and perovskite/heterojunction solar cells (Pero/HJT). Illumination and damp heat tests (following the ISOS-L-3 and ISOS-D-3 protocols) indicated that both tandem devices suffered from a pronounced interfacial instability. By revealing the buried interface properties with a multimodal interface characterization toolkit, we identified two degradation pathways: (i) perovskite decomposition at the buried interface driven by ion migration and deprotonation, and (ii) interfacial degradation of the silicon substrate exacerbated by ion invasion and hydrogen effusion. It is highlighted that the amorphous nature of the interconnection layers facilitated ion/hydrogen permeation and defect formation. Our work elucidated the additional interface degradation path of Pero/Si tandem, thus highlighting the importance of interconnection contact quality for developing durable Pero/Si tandem photovoltaics.

ACS Energy LettersVol. 11(1)
Agency for Science, Technology and Research (SG), University of Electronic Science and Technology of China (CN), The University of Queensland (AU), National University of Singapore (SG), ALBA Synchrotron (Spain) (ES), Extreme Light Infrastructure Beamlines (CZ), Institute of Bioengineering and Nanotechnology (SG), Institute of Materials Research and Engineering (SG)
Industry, innovation and infrastructure
Openalex Percentile: Top 42%
Perovskite Materials and Applications
DOISourceOpenAlex
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