Semiconductor Neural Interfaces with Ultrahigh Capacitance via Ohmic-Contacted V ₂ O ₅ Nanowires

Neural electrodes serve as essential bridges between the nervous system and external devices, yet face challenges such as high noise, infection susceptibility, and insufficient stability, hindering precise neural recording and intervention. Herein, a semiconductor-enhanced neural interface based on V₂O₅ nanowire was developed that integrates ultrahigh capacitance, efficient antibacterial activity, and favorable stability. The 3D porous nanostructure formed on the electrode surface enables ohmic contact, significantly eliminating charge transfer resistance via a low interface energy barrier, leading to a 45.9% decrease in impedance, a 14.2-fold enhancement in charge storage capacity, and a 117.2-fold increase in double-layer capacitance. Together, these improvements facilitate high-fidelity in vivo neural signal acquisition relative to commercial electrodes. The V₂O₅ electrode exhibits exceptional stability after 180° bending, 119 days of storage, and 12 min of ultrasound oscillation. Moreover, the V₂O₅ electrode shows notable multienzyme-mimicking activity and antibacterial property, with an inhibition zone diameter of 332.6 μm against <i>E. coli</i>, significantly reducing postimplantation infection risk. This work offers a viable strategy for developing high-performance multifunctional neural interfaces with significant potential for clinical translation.