Pressure Effects on Monolayer FeCl <sub>2</sub> : Above‐Room‐Temperature Ferromagnetism with In‐Plane Electric Polarization and Interface‐Free Magnetic Tunnel Junctions

ABSTRACT We investigate the influence of hydrostatic pressure on the physical properties of monolayer for spintronics applications. A phase transition from a ferromagnetic half‐metal to a ferromagnetic semiconductor is unveiled at 4.6 GPa, accompanied by a transition from a non‐polar (1T) to a polar (1H) structure. We demonstrate that hydrostatic pressure elevates the Curie temperature above room temperature (for example, 618 K at 5 GPa) and enhances the magnetic anisotropy energy (for example, 731 per formula unit at 5 GPa). A significant Dzyaloshinskii‐Moriya interaction is present in the 1H structure (due to the broken spatial inversion symmetry) and increases with the hydrostatic pressure. Together with the observation of in‐plane electric polarization (for example, 1.1 pCcm −1 at 5 GPa), this positions the 1H structure as a pioneer in the class of 2D materials. Exploiting the phase transition of monolayer , a single‐material magnetic tunnel junction is proposed and an outstanding tunneling magnetoresistance ratio is demonstrated.

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Publication Details

Journal
Advanced Electronic Materials
Published
2025-12-23
DOI
https://doi.org/10.1002/aelm.202500230
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Pressure Effects on Monolayer FeCl 2 : Above‐Room‐Temperature Ferromagnetism with In‐Plane Electric Polarization and Interface‐Free Magnetic Tunnel Junctions

Udo Schwingenschlögl, Shubham Tyagi, Paresh C. Rout, Shubham Singh
Advanced Electronic Materials
2D Materials and Applications
article

Pressure Effects on Monolayer FeCl 2 : Above‐Room‐Temperature Ferromagnetism with In‐Plane Electric Polarization and Interface‐Free Magnetic Tunnel Junctions

Udo Schwingenschlögl, Shubham Tyagi, Paresh C. Rout, Shubham Singh
article en

Abstract

ABSTRACT We investigate the influence of hydrostatic pressure on the physical properties of monolayer for spintronics applications. A phase transition from a ferromagnetic half‐metal to a ferromagnetic semiconductor is unveiled at 4.6 GPa, accompanied by a transition from a non‐polar (1T) to a polar (1H) structure. We demonstrate that hydrostatic pressure elevates the Curie temperature above room temperature (for example, 618 K at 5 GPa) and enhances the magnetic anisotropy energy (for example, 731 per formula unit at 5 GPa). A significant Dzyaloshinskii‐Moriya interaction is present in the 1H structure (due to the broken spatial inversion symmetry) and increases with the hydrostatic pressure. Together with the observation of in‐plane electric polarization (for example, 1.1 pCcm −1 at 5 GPa), this positions the 1H structure as a pioneer in the class of 2D materials. Exploiting the phase transition of monolayer , a single‐material magnetic tunnel junction is proposed and an outstanding tunneling magnetoresistance ratio is demonstrated.

Advanced Electronic MaterialsVol. 12(2)
King Abdullah University of Science and Technology (SA)
King Abdullah University of Science and Technology
Openalex Percentile: Top 48%
2D Materials and Applications
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