Magnetic Field Simulation and Verification for MMC-HVDC Submodules Under Double Pulse Test Including Dynamic Switching Behavior of 4.5 kV/5 kA IGBTs

An MMC is widely applied to the HVDC power transmission system. With a large number of insulated gate bipolar transistors (IGBTs) utilized in MMC-HVDC converter stations, an extremely complicated EM environment is generated due to the dv/dt and di/dt during the IGBT switching process. A magnetic field simulation model is proposed to calculate the magnetic field generated by a 4.5 kV/5 kA IGBT-based MMC submodule under the DPT, with the dynamic switching behavior of IGBTs considered. Firstly, a behavior model of 4.5 kV/5 kA IGBTs is built with the help of commercial software. To validate its effectiveness, a DPT simulation model is built. A comparison between the simulation result and the measured data is performed. Finally, a quasi-static Maxwell model is utilized to approximate the near field caused by the current Ic of the DPT. The simulation result of the magnetic field strength at the point near the gate driver PCB is verified by the measurement data. The proposed magnetic field simulation model can help to analyze the EMI behavior and EMI design for MMC-HVDC submodules under DPT.