ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics

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Publication Details

Journal
Advanced Electronic Materials
Published
2025-12-24
DOI
https://doi.org/10.1002/aelm.202500642
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics

Ki-Woo Song, Yeonhee Lee, Yoon‐Seo Kim, Jonghoon Kim et al.
Advanced Electronic Materials
Thin-Film Transistor Technologies
article

ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics

Ki-Woo Song, Yeonhee Lee, Yoon‐Seo Kim, Jonghoon Kim, Daejung Kim, Hyeong‐Suk Yoo, Young Jae Kim, Jin‐Seong Park
article en

Abstract

No abstract available for this paper.
Advanced Electronic MaterialsVol. 12(3)
AP Systems (South Korea) (KR), Advanced Analysis Center (JP), Hanyang University (KR)
National Research Foundation, Ministry of Trade, Industry and Energy, Korea Institute for Advancement of Technology, National Research Foundation of Korea, Ministry of Science and ICT, South Korea
Openalex Percentile: Top 42%
Thin-Film Transistor Technologies
DOIOpen Access PDFOpenAlex
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