The Impact of Self-Heating on Single-Event Transient Effect in Triple-Layer Stacked Nanosheets: A TCAD Simulation

This study investigates the impact of the self-heating effect (SHE) on single-event transient (SET) sensitivity in triple-layer stacked nanosheet transistors, using technology computer-aided design (TCAD) simulations. The results demonstrate that SHE significantly elevates the channel lattice temperature under DC bias, leading to notable degradation in DC performance metrics, including the drive current (ION) and the on/off current ratio. By employing a finer time resolution in the AC simulation, we observed that the device reaches thermal equilibrium on a picosecond timescale. Crucially, SHE is found to exacerbate SET sensitivity markedly. Compared to simulations without SHE, the presence of self-heating increases both the peak transient current and the collected charge at the drain terminal following heavy-ion strikes. Furthermore, the transient response is shown to depend on the thermal history; longer pre-strike heating times amplify the SET peak magnitude, whereas longer cooling times attenuate it. These findings underscore the critical importance of co-optimizing thermal management and radiation hardening in the design of advanced nanosheet technologies.