Epitaxial Growth of High‐Quality MoS ₂ via Sulfur Reflux CVD and Substrate Engineering

MoS₂, as a representative transition metal dichalcogenide (TMDCs), shows a promising channel material for post-silicon electronics due to its unique structural and electronic properties. However, the growth of high-quality single-crystalline MoS₂ remains challenging. In this study, we present a reproducible method for the development of high-quality single-crystalline MoS₂ films via a precursor reflux strategy on the C/M sapphire substrate. The epitaxial growth of single-crystalline MoS₂ with cm² exhibits low defect density (sulfur vacancy concentration: 6.5 × 10¹² cm^- ²) and exceptional electrical performance, including a high on/off current ratio of 10⁹ and a field-effect mobility of 105.2 cm² V^-1 s^-1. Uniform device performance across fabricated arrays confirms the homogeneity of the MoS₂ film. Additionally, this method can be extended to grow other 2D TMDCs, such as 3R-MoS₂ and 3R-WS₂. This work provides an innovative approach for the growth of high-quality single-crystalline MoS₂, thereby advancing its application in 2D electronics.