Optimized Rear‐Interface Passivation of SnS Thin‐Film Solar Cells Using a Controlled Germanium Oxide Interlayer for Enhanced Photovoltaic Performance (Small 51/2025)
Thin-Film Solar Cells In article number 2507626, Jaeyeong Heo and co-workers highlight efficiency enhancement in thin-film solar cells utilizing SnS absorber layers. In contrast to directly depositing SnS on conventional SLG/Mo substrates, the insertion of a GeOx rear passivation layer enables effective interface defect passivation and improves the characteristics of the overlying SnS absorber layer. Consequently, this approach facilitates the realization of higher-efficiency thin-film solar cells.
Authors
- Vishesh Manjunath (ORCID: https://orcid.org/0000-0003-4316-8180)
- Rahul Kumar Yadav (ORCID: https://orcid.org/0000-0002-9722-1218)
- Jin Hyeok Kim (ORCID: https://orcid.org/0000-0001-6703-2419)
- Neha Bisht
- Wookyung Jeon (ORCID: https://orcid.org/0009-0001-5302-7392)
- Jaeyeong Heo
- Yohan Yoon
- Parag R. Patil
- Yong Tae Kim
- Girish U. Kamble
Institutions
- Chonnam National University (KR)
- Korea Aerospace University (KR)
Publication Details
- Journal
- Small
- Published
- 2025-12-01
- DOI
- https://doi.org/10.1002/smll.71727
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00