Compound semiconductor direct wafer bonding by crystal heterogeneous integration

Crystal heterogeneous integration (CHI) is a technique that enables the direct (semiconductor-to-semiconductor) fusion of high-quality interfaces between both homogeneous and heterogeneous compound semiconductor materials without interposing adhesion layers. Uniquely, CHI enables the integration of hydride and metalorganic sources into the bonding ambient with the ability to independently control wafer contact, force, and temperature in the bonding process, providing the capability to overcome challenging materials integration issues for a wide range of compound semiconductors. We demonstrate the advantages of CHI for direct bonding GaN with both native GaN substrates and GaN films on heterogeneous substrates (Al2O3 and Si).