Bias Temperature Instability on SEE Susceptibility: Analysis on Combinational and Sequential Elements
This paper explores how Bias Temperature Instability affects the vulnerability of digital circuits to single event effects. The study assesses through circuit simulations the impact of BTI on the response of CMOS logic gates to heavy ions and neutrons, as well as the propagation of single event transients across logic levels in combinational logic. Additionally, it investigates the impact of aging on the Soft Error Rate, and latching window of a rising-edge flip-flop. Results show an increase in the SEE rate up to 47% induced by BTI and increased filtering capability for low values of collected charge.
Authors
- Tobias Lange (ORCID: https://orcid.org/0000-0003-2519-9434)
- Maxim S. Gorbunov (ORCID: https://orcid.org/0000-0002-4017-7033)
- V. V. A. Camargo
- B. T. Ferraz
- H. Kessler
- Y. Aguiar
Institutions
- Universidade Federal de Pelotas (BR)
- Institut de Recherche Interdisciplinaire de Grenoble (FR)
- IMEC (BE)
- ASM International (Belgium) (BE)
- Institut de Recherches en Technologies et Sciences pour le Vivant (FR)
- European Organization for Nuclear Research (CH)
Publication Details
- Published
- 2024-09-16
- DOI
- https://doi.org/10.1109/radecs61970.2024.11298578
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00