Impact of pulse operation conditions on the transient temperature distribution of GaN HEMTs <i>via</i> Raman thermometry <i>operando</i> analysis
The time-resolved Raman thermometry was used to study the transient temperature distribution of GaN HEMTs under different pulse conditions.
Authors
- Ruihua An (ORCID: https://orcid.org/0009-0003-2801-7381)
- Qiang Wang
- Liyan Dai
- Jinyan Zhao
- Gang Niu
- Wenbo Hu
- Shengli Wu
- Jie Li
Institutions
- Chinese Academy of Sciences (CN)
- Beijing Microelectronics Technology Institute (CN)
- Institute of Physics (CN)
- National Laboratory for Superconductivity (CN)
- Xi'an Jiaotong University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-12-23
- DOI
- https://doi.org/10.1039/d5tc02988k
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00